e l ek tr on isch e b a u e lemen te smg340 1 - 4.2 a, -30 v ,r ds(on) 50m p-channel enhancement mode power mos.fet [ description the SMG3401 is universally used for all commercial-industrial applications. efficient and cost-effectiveness device. to provide excellent on-resistance extremely the smg 3401 uses advanced trench technology features total power dissipation linear derating factor operating junction and storage temperature range a b s o l u t e m a x i m u m r a t i n g s drain-source voltage gate-source voltage continuous drain current continuous drain current pulsed drain current parameter symbo l ratings unit t h e r m a l d a t a parameter symbo l ratings unit thermal resistance junction-ambient 3 a v v a a i d @t a =7 0 /w c w / c c w v ds v gs i d @t a =25 i dm p d @t a =25 tj, tstg rthj-a -30 12 30 -4.2 -3.5 1.38 0.01 -55~+150 90 dim min max a 2.70 3.10 b 1. 4 0 1. 6 0 c 1.00 1.30 d 0.35 0.50 g 1.70 2. 1 0 h 0.00 0.10 j 0.10 0.26 k 0. 2 0 0. 6 0 l 0.85 1. 1 5 s 2. 40 2.8 0 all dimension in mm sc-59 3 3 1,2 o o c o c o c o o max. http://www.secosgmbh.com/ any changing of specification will not be informed individual s g d b l a 1 3 2 top view h c j k gate source drain d g s * small package outline * lower gate charge 01 -jun-2002 rev. a page 1 of 4 * rohs compliant a suffix of "-c" specifies halogen & lead-free free datasheet http:///
e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) t o t a l g a t e c h a r g e r d s ( o n ) p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e g a te t h res h o l d vo l t a g e g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n - so u r c e o n - r e s i s t a n c e d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 5 5 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s v g s ( t h ) i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f - 3 0 - 0 . 7 1 0 0 - 1 - 5 50 4.2a 9.4 2 3 4 15 _ _ 6.3 3.2 38.2 12 v d s = - 1 5 v 6 l 3.6 954 115 77 1 f = 1 . 0 m h z [ _ gate resistance rg [ 6 _ f = 1 . 0 m h z v v n a u a u a m n c n s p f [ v g s = 0 v v d s = - 5 v v g s = - 1 0 v r g = r = [ i d = - a v d s = - v v g s = - 4 . 5 v v g s = - 1 0 v , i d = - v g s = 0 v , i d = - 2 5 0 u a v g s = 12 24 v v d s = - v , v g s = 0 v d s = - 2 4 v , v g s = 0 v d s = v g s , i d = - 2 5 0 u a _ _ s o u r c e - d r a i n d i o d e _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2 _ _ _ - 1 3 . 2 2 o c o c o p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t f o r w a r d o n v o l t a g e v s d _ _ i s = - 1 . 0 - 1 . 0 - 4 2 0 . 2 1 1 . 2 a , v g s = 0 v . v r e v e r s e r e c o v e r y c h a r g e d l / d t = 1 0 0 a / u s i s = a , v g s = 0 r e v e r s e r e c o v e r y t i m e q r r t r r _ _ _ _ n s n c 2 2 c o n t i n u o u s s o u r c e c u r r e n t ( b o d y d i o d e ) i s _ _ v d = v g = 0 v , v s = - 1 . 0 v - 2 . 2 a h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l notes: 1.pulse width limited by max. junction temperature. 2.pulse width 300us, dutycycle 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board; 270 when mounted on min. copper pad. c/w ?? ?? 01-jun-2002 rev. a page 2 of 4 elektronische bauelemente smg340 1 -4.2a, -30 v,r ds(on) 50m p-channel enhancement mode power mos.fet [ 65 4 0 v gs =-4.5v, i d =- . a _ _ 1 2 0 1 0 v g s = - 2 . 5 v , i d = - . a _ _
01-jun-2002 rev. a page 3 of 4 c h a r a c t e r i s t i c s c u r v e fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature fig 5. forward characteristics of reverse diode http://www.secosgmbh.com/ any changing of specification will not be informed individual elektronische bauelemente smg340 31 -4.2a, -30 v,r ds(on) 50m p-channel enhancement mode power mos.fet [ 0 1 0 . 0 0 0 1 0 . 0 0 . 0 0 . 0 . 1 0 1 0 . 0 0 0 . 0 0 . 0 0 . 0 . 1 0 . 0 0 0 0 0 1 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 0 1
01 -jun-2002 rev. a page 4 of 4 f i g 9 . m a x i m u m s a f e o p e r a t i n g a r e a fig 10. effective transient thermal impedance fig 7. gate charge characteristics fig 8. typical capacitance characteristics http://www.secosgmbh.com/ any changing of specification will not be informed individual elektronische bauelemente SMG3401 -4.2a, -30v,r ds(on) 50m p-channel enhancement mode power mos.fet [ f i g 1 1 . n o r m a l i z e d m a x i m u m t r a n s i e n t t h e r m a l i m p e d a n c e
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